IndiumV3, Russie, Analysis, bibRecord, 000344

SXPS investigation of the Cd partial electrolyte treatment of CuInSe2 absorbers

Identifieur interne : 000344 ( Russie/Analysis ); précédent : 000343; suivant : 000345

SXPS investigation of the Cd partial electrolyte treatment of CuInSe2 absorbers

Auteurs : RBID : Pascal:05-0441712

Descripteurs français

Pascal (Inist)
- Etude expérimentale, Spectre photoélectron RX, Rayonnement synchrotron, Ségrégation, Epaisseur, Mécanisme croissance, Niveau Fermi, Polycristal, Cuivre séléniure, Indium séléniure, Composé ternaire, Cellule solaire, Couche épaisse, CuInSe2, Cu In Se, Substrat verre, 8460J, 7960B.

English descriptors

KwdEn :
- Copper selenides, Experimental study, Fermi level, Growth mechanism, Indium selenides, Polycrystal, Segregation, Solar cell, Synchrotron radiation, Ternary compound, Thick film, Thickness, X-ray photoelectron spectra.

Abstract

The chemical modification of polycrystalline CuInSe₂ absorber surfaces by the so-called Cd partial electrolyte (PE) treatment was studied by synchrotron X-ray photoelectron spectroscopy (SXPS). The Cd PE treatment was found to remove surface indium oxides and hydroxides and segregated sodium compounds. A hydroxide-terminated CdSe surface layer of one monolayer thickness is formed by the partial electrolyte treatment. The reaction mechanism is discussed as substrate site-controlled exchange reaction, where surface indium is removed and replaced by cadmium. Electronically, the Cd PE treated surface is inverted and exhibits a surface barrier which is by 0.2 eV higher than a comparable structure that was prepared by the vacuum deposition of one monolayer ofCdS onto clean CuInSe₂.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 009C35
to stream Main, to step Repository: 009586
to stream Russie, to step Extraction: 000344

Links to Exploration step

Pascal:05-0441712

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">SXPS investigation of the Cd partial electrolyte treatment of CuInSe<sub>2</sub>
 absorbers</title>
<author><name sortKey="Hunger, R" uniqKey="Hunger R">R. Hunger</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Darmstadt University of Technology, Institute of Materials Science, Petersenstr. 23</s1>
<s2>64287 Darmstadt</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<country>Allemagne</country>
<placeName><region type="land" nuts="1">Hesse (Land)</region>
<region type="district" nuts="2">District de Darmstadt</region>
<settlement type="city">Darmstadt</settlement>
</placeName>
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</author>
<author><name sortKey="Schulmeyer, T" uniqKey="Schulmeyer T">T. Schulmeyer</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Darmstadt University of Technology, Institute of Materials Science, Petersenstr. 23</s1>
<s2>64287 Darmstadt</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
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<country>Allemagne</country>
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<region type="district" nuts="2">District de Darmstadt</region>
<settlement type="city">Darmstadt</settlement>
</placeName>
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</author>
<author><name sortKey="Klein, A" uniqKey="Klein A">A. Klein</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Darmstadt University of Technology, Institute of Materials Science, Petersenstr. 23</s1>
<s2>64287 Darmstadt</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
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<country>Allemagne</country>
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<region type="district" nuts="2">District de Darmstadt</region>
<settlement type="city">Darmstadt</settlement>
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</author>
<author><name sortKey="Jaegennann, W" uniqKey="Jaegennann W">W. Jaegennann</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Darmstadt University of Technology, Institute of Materials Science, Petersenstr. 23</s1>
<s2>64287 Darmstadt</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
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<country>Allemagne</country>
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<region type="district" nuts="2">District de Darmstadt</region>
<settlement type="city">Darmstadt</settlement>
</placeName>
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</author>
<author><name sortKey="Lebedev, M V" uniqKey="Lebedev M">M. V. Lebedev</name>
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<country>Russie</country>
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</author>
<author><name sortKey="Sakurai, K" uniqKey="Sakurai K">K. Sakurai</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>AIST, Research Center for Photovoltaics</s1>
<s2>Tsukuba, Ibaraki 305-8568</s2>
<s3>JPN</s3>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>Japon</country>
<wicri:noRegion>Tsukuba, Ibaraki 305-8568</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Niki, S" uniqKey="Niki S">S. Niki</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>AIST, Research Center for Photovoltaics</s1>
<s2>Tsukuba, Ibaraki 305-8568</s2>
<s3>JPN</s3>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>Japon</country>
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</titleStmt>
<publicationStmt><idno type="inist">05-0441712</idno>
<date when="2005">2005</date>
<idno type="stanalyst">PASCAL 05-0441712 INIST</idno>
<idno type="RBID">Pascal:05-0441712</idno>
<idno type="wicri:Area/Main/Corpus">009C35</idno>
<idno type="wicri:Area/Main/Repository">009586</idno>
<idno type="wicri:Area/Russie/Extraction">000344</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0040-6090</idno>
<title level="j" type="abbreviated">Thin solid films</title>
<title level="j" type="main">Thin solid films</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Copper selenides</term>
<term>Experimental study</term>
<term>Fermi level</term>
<term>Growth mechanism</term>
<term>Indium selenides</term>
<term>Polycrystal</term>
<term>Segregation</term>
<term>Solar cell</term>
<term>Synchrotron radiation</term>
<term>Ternary compound</term>
<term>Thick film</term>
<term>Thickness</term>
<term>X-ray photoelectron spectra</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term>
<term>Spectre photoélectron RX</term>
<term>Rayonnement synchrotron</term>
<term>Ségrégation</term>
<term>Epaisseur</term>
<term>Mécanisme croissance</term>
<term>Niveau Fermi</term>
<term>Polycristal</term>
<term>Cuivre séléniure</term>
<term>Indium séléniure</term>
<term>Composé ternaire</term>
<term>Cellule solaire</term>
<term>Couche épaisse</term>
<term>CuInSe2</term>
<term>Cu In Se</term>
<term>Substrat verre</term>
<term>8460J</term>
<term>7960B</term>
</keywords>
</textClass>
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<front><div type="abstract" xml:lang="en">The chemical modification of polycrystalline CuInSe<sub>2</sub>
 absorber surfaces by the so-called Cd partial electrolyte (PE) treatment was studied by synchrotron X-ray photoelectron spectroscopy (SXPS). The Cd PE treatment was found to remove surface indium oxides and hydroxides and segregated sodium compounds. A hydroxide-terminated CdSe surface layer of one monolayer thickness is formed by the partial electrolyte treatment. The reaction mechanism is discussed as substrate site-controlled exchange reaction, where surface indium is removed and replaced by cadmium. Electronically, the Cd PE treated surface is inverted and exhibits a surface barrier which is by 0.2 eV higher than a comparable structure that was prepared by the vacuum deposition of one monolayer ofCdS onto clean CuInSe<sub>2</sub>
.</div>
</front>
</TEI>
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<fA02 i1="01"><s0>THSFAP</s0>
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<fA03 i2="1"><s0>Thin solid films</s0>
</fA03>
<fA05><s2>480-81</s2>
</fA05>
<fA08 i1="01" i2="1" l="ENG"><s1>SXPS investigation of the Cd partial electrolyte treatment of CuInSe<sub>2</sub>
 absorbers</s1>
</fA08>
<fA09 i1="01" i2="1" l="ENG"><s1>Proceedings of Symposium O on Thin Film Chalcogenide Photovoltaic Materials, EMRS 2004 Conference, Strasbourg, France, 24-28 May, 2004</s1>
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<fA11 i1="01" i2="1"><s1>HUNGER (R.)</s1>
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</fA11>
<fA11 i1="05" i2="1"><s1>LEBEDEV (M. V.)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>SAKURAI (K.)</s1>
</fA11>
<fA11 i1="07" i2="1"><s1>NIKI (S.)</s1>
</fA11>
<fA12 i1="01" i2="1"><s1>TIWARI (Ayodhya N.)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="02" i2="1"><s1>LINCOT (Daniel)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="03" i2="1"><s1>SCHOCK (Hans Werner)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="04" i2="1"><s1>COMPANN (Alvin D.)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="05" i2="1"><s1>WADA (Takahiro)</s1>
<s9>ed.</s9>
</fA12>
<fA14 i1="01"><s1>Darmstadt University of Technology, Institute of Materials Science, Petersenstr. 23</s1>
<s2>64287 Darmstadt</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
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<fA14 i1="02"><s1>Ioffe Physicolechnical Institute, Russian Academy of Sciences</s1>
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<sZ>5 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>AIST, Research Center for Photovoltaics</s1>
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<s3>JPN</s3>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
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<fA18 i1="01" i2="1"><s1>European Materials Research Society</s1>
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<s9>patr.</s9>
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<fA20><s1>218-223</s1>
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<fA21><s1>2005</s1>
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<fA23 i1="01"><s0>ENG</s0>
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</fA64>
<fA66 i1="01"><s0>CHE</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>The chemical modification of polycrystalline CuInSe<sub>2</sub>
 absorber surfaces by the so-called Cd partial electrolyte (PE) treatment was studied by synchrotron X-ray photoelectron spectroscopy (SXPS). The Cd PE treatment was found to remove surface indium oxides and hydroxides and segregated sodium compounds. A hydroxide-terminated CdSe surface layer of one monolayer thickness is formed by the partial electrolyte treatment. The reaction mechanism is discussed as substrate site-controlled exchange reaction, where surface indium is removed and replaced by cadmium. Electronically, the Cd PE treated surface is inverted and exhibits a surface barrier which is by 0.2 eV higher than a comparable structure that was prepared by the vacuum deposition of one monolayer ofCdS onto clean CuInSe<sub>2</sub>
.</s0>
</fC01>
<fC02 i1="01" i2="X"><s0>001D06C02D1</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B70I60B</s0>
</fC02>
<fC02 i1="03" i2="X"><s0>230</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Etude expérimentale</s0>
<s5>02</s5>
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<s5>02</s5>
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<s5>04</s5>
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<s5>04</s5>
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<s5>04</s5>
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<s5>05</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Segregation</s0>
<s5>05</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Segregación</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Epaisseur</s0>
<s5>06</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Thickness</s0>
<s5>06</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Espesor</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Mécanisme croissance</s0>
<s5>07</s5>
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<fC03 i1="06" i2="X" l="ENG"><s0>Growth mechanism</s0>
<s5>07</s5>
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<s5>07</s5>
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<s5>08</s5>
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<s5>08</s5>
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<s5>08</s5>
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<fC03 i1="08" i2="X" l="FRE"><s0>Polycristal</s0>
<s5>15</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Polycrystal</s0>
<s5>15</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Policristal</s0>
<s5>15</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Cuivre séléniure</s0>
<s2>NK</s2>
<s5>16</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Copper selenides</s0>
<s2>NK</s2>
<s5>16</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Indium séléniure</s0>
<s2>NK</s2>
<s5>17</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Indium selenides</s0>
<s2>NK</s2>
<s5>17</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Composé ternaire</s0>
<s5>18</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Ternary compound</s0>
<s5>18</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Compuesto ternario</s0>
<s5>18</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Cellule solaire</s0>
<s5>19</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Solar cell</s0>
<s5>19</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Célula solar</s0>
<s5>19</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Couche épaisse</s0>
<s5>20</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>Thick film</s0>
<s5>20</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA"><s0>Capa espesa</s0>
<s5>20</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>CuInSe2</s0>
<s4>INC</s4>
<s5>52</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Cu In Se</s0>
<s4>INC</s4>
<s5>53</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>Substrat verre</s0>
<s4>INC</s4>
<s5>54</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE"><s0>8460J</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fC03 i1="18" i2="X" l="FRE"><s0>7960B</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>57</s5>
</fC03>
<fC07 i1="01" i2="X" l="FRE"><s0>Composé minéral</s0>
<s5>48</s5>
</fC07>
<fC07 i1="01" i2="X" l="ENG"><s0>Inorganic compound</s0>
<s5>48</s5>
</fC07>
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<s5>48</s5>
</fC07>
<fC07 i1="02" i2="3" l="FRE"><s0>Métal transition composé</s0>
<s5>49</s5>
</fC07>
<fC07 i1="02" i2="3" l="ENG"><s0>Transition element compounds</s0>
<s5>49</s5>
</fC07>
<fN21><s1>305</s1>
</fN21>
<fN44 i1="01"><s1>PSI</s1>
</fN44>
<fN82><s1>PSI</s1>
</fN82>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>EMRS 2004 Conference</s1>
<s3>Strasbourg FRA</s3>
<s4>2004-05-24</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

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SXPS investigation of the Cd partial electrolyte treatment of CuInSe2 absorbers

SXPS investigation of the Cd partial electrolyte treatment of CuInSe2 absorbers

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